BUK9Q4R6-40HJ Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: BUK9Q4R6-40H/SOT8002/MLPAK33
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3645 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: MLPAK33
Vgs(th) (Max) @ Id: 2.05V @ 1mA
Power Dissipation (Max): 84W (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
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Технічний опис BUK9Q4R6-40HJ Nexperia USA Inc.
Description: BUK9Q4R6-40H/SOT8002/MLPAK33, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 3645 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Grade: Automotive, Supplier Device Package: MLPAK33, Vgs(th) (Max) @ Id: 2.05V @ 1mA, Power Dissipation (Max): 84W (Tc), Rds On (Max) @ Id, Vgs: 4.6mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Wettable Flank, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Інші пропозиції BUK9Q4R6-40HJ
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
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BUK9Q4R6-40HJ | Nexperia USA Inc. |
Description: BUK9Q4R6-40H/SOT8002/MLPAK33 Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 3645 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: MLPAK33 Vgs(th) (Max) @ Id: 2.05V @ 1mA Power Dissipation (Max): 84W (Tc) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
| BUK9Q4R6-40HJ |
|
Виробник: Nexperia USA Inc.
Description: BUK9Q4R6-40H/SOT8002/MLPAK33
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3645 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: MLPAK33
Vgs(th) (Max) @ Id: 2.05V @ 1mA
Power Dissipation (Max): 84W (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: BUK9Q4R6-40H/SOT8002/MLPAK33
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3645 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: MLPAK33
Vgs(th) (Max) @ Id: 2.05V @ 1mA
Power Dissipation (Max): 84W (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.