Продукція > NEXPERIA > BUK9Y11-30B,115
BUK9Y11-30B,115

BUK9Y11-30B,115 Nexperia


BUK9Y11-30B-1598964.pdf Виробник: Nexperia
MOSFET Trans MOSFET N-CH 30V 59A 5-Pin(4+Tab)
на замовлення 2 шт:

термін постачання 21-30 дні (днів)
В кошику  од. на суму  грн.
Відгуки про товар
Написати відгук

Технічний опис BUK9Y11-30B,115 Nexperia

Description: MOSFET N-CH 30V 59A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 59A (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 25A, 10V, Power Dissipation (Max): 75W (Tc), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1614 pF @ 25 V, Qualification: AEC-Q101.

Інші пропозиції BUK9Y11-30B,115

Фото Назва Виробник Інформація Доступність
Ціна
BUK9Y11-30B,115 BUK9Y11-30B,115 Виробник : Nexperia USA Inc. BUK9Y11-30B.pdf Description: MOSFET N-CH 30V 59A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 25A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1614 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BUK9Y11-30B,115 BUK9Y11-30B,115 Виробник : Nexperia USA Inc. BUK9Y11-30B.pdf Description: MOSFET N-CH 30V 59A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 25A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1614 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.