BUK9Y113-100E,115 Nexperia USA Inc.
Виробник: Nexperia USA Inc.Description: MOSFET N-CH 100V 12A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 19.72 грн |
| 3000+ | 16.92 грн |
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Технічний опис BUK9Y113-100E,115 Nexperia USA Inc.
Description: MOSFET N-CH 100V 12A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 110mOhm @ 5A, 10V, Power Dissipation (Max): 45W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції BUK9Y113-100E,115 за ціною від 13.65 грн до 46.82 грн
| Фото | Назва | Виробник | Інформація |
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BUK9Y113-100E,115 | Виробник : Nexperia |
MOSFET BUK9Y113-100E/SOT669/LFPAK |
на замовлення 109554 шт: термін постачання 21-30 дні (днів) |
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BUK9Y113-100E,115 | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 100V 12A LFPAK56 Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 5A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 6937 шт: термін постачання 21-31 дні (днів) |
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BUK9Y113-100E,115 | Виробник : NEXPERIA |
Trans MOSFET N-CH 100V 12A Automotive 5-Pin(4+Tab) LFPAK T/R |
товар відсутній |
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BUK9Y113-100E,115 | Виробник : Nexperia |
Trans MOSFET N-CH 100V 12A Automotive AEC-Q101 5-Pin(4+Tab) LFPAK T/R |
товар відсутній |
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| BUK9Y113-100E,115 | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 8.5A; Idm: 48A; 45W Mounting: SMD Case: LFPAK56; PowerSO8; SOT669 Kind of package: reel; tape Pulsed drain current: 48A Drain-source voltage: 100V Drain current: 8.5A On-state resistance: 312mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 45W Polarisation: unipolar Gate charge: 8.4nC Kind of channel: enhanced Gate-source voltage: ±10V кількість в упаковці: 1 шт |
товар відсутній |
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| BUK9Y113-100E,115 | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 8.5A; Idm: 48A; 45W Mounting: SMD Case: LFPAK56; PowerSO8; SOT669 Kind of package: reel; tape Pulsed drain current: 48A Drain-source voltage: 100V Drain current: 8.5A On-state resistance: 312mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 45W Polarisation: unipolar Gate charge: 8.4nC Kind of channel: enhanced Gate-source voltage: ±10V |
товар відсутній |