BUK9Y12-55B,115 Nexperia

Description: MOSFET N-CH 55V 61.8A LFPAK56, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V, Drain to Source Voltage (Vdss): 55 V, Vgs (Max): ±15V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Grade: Automotive, Supplier Device Package: LFPAK56, Power-SO8, Vgs(th) (Max) @ Id: 2.15V @ 1mA, Power Dissipation (Max): 106W (Tc), Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 61.8A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-100, SOT-669, Packaging: Tape & Reel (TR).