| Кількість | Ціна |
|---|---|
| 4+ | 91.82 грн |
| 10+ | 69.62 грн |
| 100+ | 39.14 грн |
| 500+ | 32.03 грн |
| 1000+ | 30.31 грн |
| 1500+ | 28.44 грн |
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Технічний опис BUK9Y19-75B,115 Nexperia
Description: NEXPERIA - BUK9Y19-75B,115 - Leistungs-MOSFET, n-Kanal, 75 V, 48.2 A, 0.0147 ohm, SC-100, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 75V, rohsCompliant: Y-EX, Dauer-Drainstrom Id: 48.2A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 1.65V, euEccn: NLR, Verlustleistung: 106W, Bauform - Transistor: SC-100, Anzahl der Pins: 4Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 0.0147ohm, SVHC: Lead (25-Jun-2025).
Інші пропозиції BUK9Y19-75B,115 за ціною від 36.75 грн до 186.05 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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BUK9Y19-75B,115 | NEXPERIA |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 75V; 34.1A; Idm: 192A; 106W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 34.1A Pulsed drain current: 192A Power dissipation: 106W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±15V On-state resistance: 48mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
на замовлення 887 шт: термін постачання 14-30 дні (днів) |
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BUK9Y19-75B,115 | Nexperia USA Inc. |
Description: MOSFET N-CH 75V 48.2A LFPAK56 Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48.2A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V Power Dissipation (Max): 106W (Tc) Vgs(th) (Max) @ Id: 2.15V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3096 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1477 шт: термін постачання 21-31 дні (днів) |
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BUK9Y19-75B,115 | NEXPERIA |
Description: NEXPERIA - BUK9Y19-75B,115 - Leistungs-MOSFET, n-Kanal, 75 V, 48.2 A, 0.0147 ohm, SC-100, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 75V rohsCompliant: Y-EX Dauer-Drainstrom Id: 48.2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.65V euEccn: NLR Verlustleistung: 106W Bauform - Transistor: SC-100 Anzahl der Pins: 4Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0147ohm SVHC: Lead (25-Jun-2025) |
на замовлення 309 шт: термін постачання 21-31 дні (днів) |
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| BUK9Y19-75B,115 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 34.1A; Idm: 192A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 34.1A
Pulsed drain current: 192A
Power dissipation: 106W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±15V
On-state resistance: 48mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 34.1A; Idm: 192A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 34.1A
Pulsed drain current: 192A
Power dissipation: 106W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±15V
On-state resistance: 48mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
на замовлення 887 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 112.76 грн |
| 10+ | 78.11 грн |
| 25+ | 69.80 грн |
| 100+ | 64.82 грн |
| 250+ | 62.32 грн |
| 500+ | 56.51 грн |
| BUK9Y19-75B,115 |
|
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 75V 48.2A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48.2A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3096 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 75V 48.2A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48.2A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3096 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1477 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 121.93 грн |
| 10+ | 74.11 грн |
| 100+ | 49.67 грн |
| 500+ | 36.75 грн |
| BUK9Y19-75B,115 |
|
Виробник: NEXPERIA
Description: NEXPERIA - BUK9Y19-75B,115 - Leistungs-MOSFET, n-Kanal, 75 V, 48.2 A, 0.0147 ohm, SC-100, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 75V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 48.2A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.65V
euEccn: NLR
Verlustleistung: 106W
Bauform - Transistor: SC-100
Anzahl der Pins: 4Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0147ohm
SVHC: Lead (25-Jun-2025)
Description: NEXPERIA - BUK9Y19-75B,115 - Leistungs-MOSFET, n-Kanal, 75 V, 48.2 A, 0.0147 ohm, SC-100, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 75V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 48.2A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.65V
euEccn: NLR
Verlustleistung: 106W
Bauform - Transistor: SC-100
Anzahl der Pins: 4Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0147ohm
SVHC: Lead (25-Jun-2025)
на замовлення 309 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 186.05 грн |
| 10+ | 115.98 грн |
| 100+ | 77.00 грн |