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Технічний опис BUK9Y22-30B,115 Nexperia
Description: MOSFET N-CH 30V 37.7A LFPAK56, Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±15V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Part Status: Obsolete, Supplier Device Package: LFPAK56, Power-SO8, Vgs(th) (Max) @ Id: 2V @ 1mA, Power Dissipation (Max): 59.4W (Tc), Rds On (Max) @ Id, Vgs: 19mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 37.7A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-100, SOT-669, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive.
Інші пропозиції BUK9Y22-30B,115
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
|
BUK9Y22-30B,115 | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 37.7A LFPAK56Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±15V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Part Status: Obsolete Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 59.4W (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 37.7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
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В кошику од. на суму грн. |
| BUK9Y22-30B,115 |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 37.7A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 59.4W (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 37.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET N-CH 30V 37.7A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 59.4W (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 37.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
товару немає в наявності
В кошику
од. на суму грн.




