BUK9Y38-100E,115 Nexperia
| Кількість | Ціна |
|---|---|
| 4+ | 87.17 грн |
| 10+ | 58.94 грн |
| 100+ | 34.29 грн |
| 250+ | 34.22 грн |
| 500+ | 27.30 грн |
| 1000+ | 24.72 грн |
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Технічний опис BUK9Y38-100E,115 Nexperia
Description: MOSFET N-CH 100V 30A LFPAK56, Input Capacitance (Ciss) (Max) @ Vds: 2541 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 21.6 nC @ 5 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Part Status: Active, Supplier Device Package: LFPAK56, Power-SO8, Vgs(th) (Max) @ Id: 2.1V @ 1mA, Power Dissipation (Max): 94.9W (Tc), Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 5V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-100, SOT-669, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive.
Інші пропозиції BUK9Y38-100E,115 за ціною від 36.87 грн до 98.98 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BUK9Y38-100E,115 | Nexperia USA Inc. |
 Description: MOSFET N-CH 100V 30A LFPAK56Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 5V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 2541 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 21.6 nC @ 5 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Part Status: Active Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 2.1V @ 1mA Power Dissipation (Max): 94.9W (Tc) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 1446 шт: термін постачання 21-31 дні (днів) |
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| BUK9Y38-100E,115 |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 30A LFPAK56
Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 5V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2541 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 21.6 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 94.9W (Tc)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET N-CH 100V 30A LFPAK56
Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 5V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2541 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 21.6 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 94.9W (Tc)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 1446 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 98.98 грн |
| 10+ | 59.76 грн |
| 50+ | 44.30 грн |
| 100+ | 36.87 грн |