| Кількість | Ціна |
|---|---|
| 4+ | 107.53 грн |
| 10+ | 88.33 грн |
| 100+ | 51.18 грн |
| 500+ | 41.90 грн |
| 1000+ | 38.41 грн |
| 1500+ | 38.34 грн |
| 9000+ | 36.87 грн |
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Технічний опис BUK9Y3R0-40E,115 Nexperia
Description: MOSFET N-CH 40V 100A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 10V, Power Dissipation (Max): 194W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 35.5 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 5962 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції BUK9Y3R0-40E,115 за ціною від 38.99 грн до 127.26 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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BUK9Y3R0-40E,115 | Nexperia USA Inc. |
 Description: MOSFET N-CH 40V 100A LFPAK56Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 10V Power Dissipation (Max): 194W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 35.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 5962 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1357 шт: термін постачання 21-31 дні (днів) |
|
| BUK9Y3R0-40E,115 |
|
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 10V
Power Dissipation (Max): 194W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5962 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 10V
Power Dissipation (Max): 194W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5962 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1357 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 127.26 грн |
| 10+ | 77.84 грн |
| 100+ | 52.45 грн |
| 500+ | 38.99 грн |