Технічний опис BUZ102SL INFINEON
Description: N-CHANNEL POWER MOSFET, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 47A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 33A, 10V, Power Dissipation (Max): 120W (Tc), Vgs(th) (Max) @ Id: 2V @ 90µA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±14V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V.
Інші пропозиції BUZ102SL
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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BUZ102SL Код товару: 27207 |
Виробник : Siemens |
 Транзистори > Польові N-канальніКорпус: TO-220 Uds,V: 50 V Idd,A: 42 A Rds(on), Ohm: 0,023 Ohm Ciss, pF/Qg, nC: 1620/ - Монтаж: THT |
товар відсутній
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BUZ102SL | Виробник : Infineon Technologies |
Description: N-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 33A, 10V Power Dissipation (Max): 120W (Tc) Vgs(th) (Max) @ Id: 2V @ 90µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±14V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V |
товар відсутній |