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BUZ30A H3045A

BUZ30A H3045A Infineon Technologies

Infineon-BUZ30AH3045A-DS-v02_02-en-1225636.pdf
Виробник: Infineon Technologies
MOSFET N-Ch 200V 21A D2PAK-2
на замовлення 171 шт:
термін постачання 21-30 дні (днів)
КількістьЦіна
2+193.24 грн
10+171.84 грн
100+119.82 грн
250+102.20 грн
500+85.28 грн
1000+72.60 грн
2000+68.93 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
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Технічний опис BUZ30A H3045A Infineon Technologies

Description: BUZ30 - 12V-300V N-CHANNEL POWER, Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PG-TO263-3-2, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 125W (Tc), Rds On (Max) @ Id, Vgs: 130mOhm @ 13.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 21A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Packaging: Bulk.

Інші пропозиції BUZ30A H3045A

Фото Назва Виробник Інформація Доступність Ціна
BUZ30AH3045A Infineon Technologies INFNS15132-1.pdf?t.download=true&u=5oefqw Description: BUZ30 - 12V-300V N-CHANNEL POWER
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Bulk
товару немає в наявності
В кошику  од. на суму  грн.
BUZ30A H3045A Infineon Technologies INFNS15132-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Bulk
товару немає в наявності
В кошику  од. на суму  грн.
BUZ30AH3045A INFNS15132-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: BUZ30 - 12V-300V N-CHANNEL POWER
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Bulk
товару немає в наявності
В кошику  од. на суму  грн.
BUZ30A H3045A INFNS15132-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Bulk
товару немає в наявності
В кошику  од. на суму  грн.