Технічний опис BUZ31 E3045A INF
Description: MOSFET N-CH 200V 14.5A D2PAK, Current - Continuous Drain (Id) @ 25°C: 14.5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 25 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PG-TO263-3, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 95W (Tc), Rds On (Max) @ Id, Vgs: 200mOhm @ 9A, 5V.
Інші пропозиції BUZ31 E3045A
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
BUZ31 E3045A | Infineon Technologies |
 Description: MOSFET N-CH 200V 14.5A D2PAKCurrent - Continuous Drain (Id) @ 25°C: 14.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 25 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-TO263-3 Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 95W (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 9A, 5V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. |
 |
BUZ31 E3045A | Infineon Technologies |
MOSFETs N-KANAL POWER MOS |
товару немає в наявності |
В кошику од. на суму грн. |
| BUZ31 E3045A |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 14.5A D2PAK
Current - Continuous Drain (Id) @ 25°C: 14.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 25 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 95W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 9A, 5V
Description: MOSFET N-CH 200V 14.5A D2PAK
Current - Continuous Drain (Id) @ 25°C: 14.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 25 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 95W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 9A, 5V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| BUZ31 E3045A |
|
Виробник: Infineon Technologies
MOSFETs N-KANAL POWER MOS
MOSFETs N-KANAL POWER MOS
товару немає в наявності
В кошику
од. на суму грн.