Технічний опис BUZ73AL INF
Description: MOSFET N-CH 200V 5.5A TO220-3, Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 25 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 5V, Supplier Device Package: PG-TO220-3, Vgs(th) (Max) @ Id: 2V @ 1mA, Power Dissipation (Max): 40W (Tc), Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 5V, Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ).
Інші пропозиції BUZ73AL
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
BUZ73AL | Infineon Technologies |
Description: MOSFET N-CH 200V 5.5A TO220-3Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 25 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V Supplier Device Package: PG-TO220-3 Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 5V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. |
|
BUZ73AL | Infineon Technologies |
MOSFET N-Ch 200V 5.5A TO220-3 |
товару немає в наявності |
В кошику од. на суму грн. |
| BUZ73AL |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 5.5A TO220-3
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 25 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 5V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Description: MOSFET N-CH 200V 5.5A TO220-3
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 25 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 5V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику
од. на суму грн.
| BUZ73AL |
![]() |
Виробник: Infineon Technologies
MOSFET N-Ch 200V 5.5A TO220-3
MOSFET N-Ch 200V 5.5A TO220-3
товару немає в наявності
В кошику
од. на суму грн.




