BUZ77B
Виробник:
на замовлення 22000 шт:
термін постачання 14-28 дні (днів)
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Технічний опис BUZ77B
Description: N-CHANNEL POWER MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 25 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220AB, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 75W (Tc), Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1.7A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Bulk.
Інші пропозиції BUZ77B
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| BUZ77B | Infineon Technologies |
Description: N-CHANNEL POWER MOSFET Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 25 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1.7A, 10V Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. |
| BUZ77B |
|
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 25 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 25 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.