BY25FQ256ESEIG(R) BYTe Semiconductor
Виробник: BYTe Semiconductor
Description: 256 MBIT, 3.0V (2.7V TO 3.6V), 1
Memory Organization: 32M x 8
Access Time: 5 ns
Memory Interface: SPI - Quad I/O, QPI, DTR
Write Cycle Time - Word, Page: 100µs, 2.4ms
Supplier Device Package: 8-WSON (8x6)
Memory Format: FLASH
Clock Frequency: 166 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Mbit
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Packaging: Cut Tape (CT)
| Кількість | Ціна |
|---|---|
| 3+ | 137.93 грн |
| 10+ | 123.57 грн |
| 25+ | 120.02 грн |
| 50+ | 110.11 грн |
| 100+ | 107.56 грн |
| 250+ | 104.20 грн |
| 500+ | 100.00 грн |
| 1000+ | 97.53 грн |
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Технічний опис BY25FQ256ESEIG(R) BYTe Semiconductor
Description: 256 MBIT, 3.0V (2.7V TO 3.6V), 1, Memory Type: Non-Volatile, Memory Size: 256Mbit, Mounting Type: Surface Mount, Package / Case: 8-WDFN Exposed Pad, Packaging: Tape & Reel (TR), Supplier Device Package: 8-WSON (8x6), Memory Format: FLASH, Clock Frequency: 166 MHz, Memory Organization: 32M x 8, Access Time: 5 ns, Memory Interface: SPI - Quad I/O, QPI, DTR, Write Cycle Time - Word, Page: 100µs, 2.4ms, Technology: FLASH - NOR, Voltage - Supply: 2.7V ~ 3.6V, Operating Temperature: -40°C ~ 85°C (TA).
Інші пропозиції BY25FQ256ESEIG(R)
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
| BY25FQ256ESEIG(R) | BYTe Semiconductor |
Description: 256 MBIT, 3.0V (2.7V TO 3.6V), 1 Memory Type: Non-Volatile Memory Size: 256Mbit Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Packaging: Tape & Reel (TR) Supplier Device Package: 8-WSON (8x6) Memory Format: FLASH Clock Frequency: 166 MHz Memory Organization: 32M x 8 Access Time: 5 ns Memory Interface: SPI - Quad I/O, QPI, DTR Write Cycle Time - Word, Page: 100µs, 2.4ms Technology: FLASH - NOR Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
| BY25FQ256ESEIG(R) |
|
Виробник: BYTe Semiconductor
Description: 256 MBIT, 3.0V (2.7V TO 3.6V), 1
Memory Type: Non-Volatile
Memory Size: 256Mbit
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-WSON (8x6)
Memory Format: FLASH
Clock Frequency: 166 MHz
Memory Organization: 32M x 8
Access Time: 5 ns
Memory Interface: SPI - Quad I/O, QPI, DTR
Write Cycle Time - Word, Page: 100µs, 2.4ms
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Description: 256 MBIT, 3.0V (2.7V TO 3.6V), 1
Memory Type: Non-Volatile
Memory Size: 256Mbit
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-WSON (8x6)
Memory Format: FLASH
Clock Frequency: 166 MHz
Memory Organization: 32M x 8
Access Time: 5 ns
Memory Interface: SPI - Quad I/O, QPI, DTR
Write Cycle Time - Word, Page: 100µs, 2.4ms
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.