BY25Q128ESWIG(R) BYTe Semiconductor
Виробник: BYTe SemiconductorDescription: 128 MBIT, 3.0V (2.7V TO 3.6V), -
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 120 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (5x6)
Write Cycle Time - Word, Page: 60µs, 2.4ms
Memory Interface: SPI - Quad I/O
Access Time: 7.5 ns
Memory Organization: 16M x 8
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Технічний опис BY25Q128ESWIG(R) BYTe Semiconductor
Description: 128 MBIT, 3.0V (2.7V TO 3.6V), -, Packaging: Tape & Reel (TR), Package / Case: 8-WDFN Exposed Pad, Mounting Type: Surface Mount, Memory Size: 128Mbit, Memory Type: Non-Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 2.7V ~ 3.6V, Technology: FLASH - NOR (SLC), Clock Frequency: 120 MHz, Memory Format: FLASH, Supplier Device Package: 8-WSON (5x6), Write Cycle Time - Word, Page: 60µs, 2.4ms, Memory Interface: SPI - Quad I/O, Access Time: 7.5 ns, Memory Organization: 16M x 8.
Інші пропозиції BY25Q128ESWIG(R)
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BY25Q128ESWIG(R) | Виробник : BYTe Semiconductor |
Description: 128 MBIT, 3.0V (2.7V TO 3.6V), - Packaging: Cut Tape (CT) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7.5 ns Memory Organization: 16M x 8 |
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