BY25Q16BLMIG(R) BYTe Semiconductor
Виробник: BYTe SemiconductorDescription: 16 MBIT, 1.8V (1.65V TO 2.0V), -
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-USON (2x3)
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Access Time: 8 ns
Memory Organization: 2M x 8
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Технічний опис BY25Q16BLMIG(R) BYTe Semiconductor
Description: 16 MBIT, 1.8V (1.65V TO 2.0V), -, Packaging: Tape & Reel (TR), Package / Case: 8-UFDFN Exposed Pad, Mounting Type: Surface Mount, Memory Size: 16Mbit, Memory Type: Non-Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 1.65V ~ 2V, Technology: FLASH - NOR (SLC), Clock Frequency: 108 MHz, Memory Format: FLASH, Supplier Device Package: 8-USON (2x3), Write Cycle Time - Word, Page: 3ms, Memory Interface: SPI - Quad I/O, Access Time: 8 ns, Memory Organization: 2M x 8.
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BY25Q16BLMIG(R) | Виробник : BYTe Semiconductor |
Description: 16 MBIT, 1.8V (1.65V TO 2.0V), - Packaging: Cut Tape (CT) Package / Case: 8-UFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-USON (2x3) Write Cycle Time - Word, Page: 3ms Memory Interface: SPI - Quad I/O Access Time: 8 ns Memory Organization: 2M x 8 |
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