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BYC8B-600PJ

BYC8B-600PJ WeEn Semiconductors

byc8b-600p.pdf Виробник: WeEn Semiconductors
Description: DIODE STANDARD 600V 8A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 18 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.4 V @ 8 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
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Технічний опис BYC8B-600PJ WeEn Semiconductors

Description: DIODE STANDARD 600V 8A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 18 ns, Technology: Standard, Current - Average Rectified (Io): 8A, Supplier Device Package: D2PAK, Operating Temperature - Junction: 175°C (Max), Part Status: Active, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 3.4 V @ 8 A, Current - Reverse Leakage @ Vr: 20 µA @ 600 V.

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BYC8B-600PJ BYC8B-600PJ Виробник : WeEn Semiconductors byc8b-600p.pdf Description: DIODE STANDARD 600V 8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 18 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.4 V @ 8 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
BYC8B-600PJ BYC8B-600PJ Виробник : WeEn Semiconductors byc8b-600p.pdf Rectifiers Hyperfast pwr diode
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