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BYD17D,115

BYD17D,115 NXP USA Inc.

BYD17.pdf
Виробник: NXP USA Inc.
Description: DIODE AVALANCHE 200V 1.5A MELF
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: MELF
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 21pF @ 0V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 3 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-87
Packaging: Tape & Reel (TR)
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Технічний опис BYD17D,115 NXP USA Inc.

Description: DIODE AVALANCHE 200V 1.5A MELF, Current - Reverse Leakage @ Vr: 1 µA @ 200 V, Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A, Voltage - DC Reverse (Vr) (Max): 200 V, Part Status: Obsolete, Operating Temperature - Junction: -65°C ~ 175°C, Supplier Device Package: MELF, Current - Average Rectified (Io): 1.5A, Capacitance @ Vr, F: 21pF @ 0V, 1MHz, Technology: Avalanche, Reverse Recovery Time (trr): 3 µs, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: SOD-87, Packaging: Tape & Reel (TR).