Технічний опис BYD37M,115 NXP
Description: DIODE AVALANCHE 1KV 600MA MELF, Mounting Type: Surface Mount, Package / Case: SOD-87, Packaging: Tape & Reel (TR), Current - Reverse Leakage @ Vr: 1 µA @ 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A, Voltage - DC Reverse (Vr) (Max): 1000 V, Part Status: Obsolete, Operating Temperature - Junction: -65°C ~ 175°C, Supplier Device Package: MELF, Current - Average Rectified (Io): 600mA, Capacitance @ Vr, F: 20pF @ 0V, 1MHz, Technology: Avalanche, Reverse Recovery Time (trr): 300 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io).
Інші пропозиції BYD37M,115
| Фото | Назва | Виробник | Інформація |
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BYD37M,115 | Виробник : NXP USA Inc. |
 Description: DIODE AVALANCHE 1KV 600MA MELFMounting Type: Surface Mount Package / Case: SOD-87 Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 1 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 1000 V Part Status: Obsolete Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: MELF Current - Average Rectified (Io): 600mA Capacitance @ Vr, F: 20pF @ 0V, 1MHz Technology: Avalanche Reverse Recovery Time (trr): 300 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) |
товару немає в наявності |
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| BYD37M,115 | Виробник : NXP Semiconductors |
Rectifiers TAPE-7 REC-DD |
товару немає в наявності |