Технічний опис BYG10DHE3_A/H Vishay
Description: DIODE AVAL 200V 1.5A DO214AC, Packaging: Tape & Reel (TR), Package / Case: DO-214AC, SMA, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 4 µs, Technology: Avalanche, Current - Average Rectified (Io): 1.5A, Supplier Device Package: DO-214AC (SMA), Operating Temperature - Junction: -55°C ~ 150°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A, Current - Reverse Leakage @ Vr: 1 µA @ 200 V, Qualification: AEC-Q101.
Інші пропозиції BYG10DHE3_A/H
| Фото | Назва | Виробник | Інформація |
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Ціна |
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BYG10DHE3_A/H | Виробник : Vishay General Semiconductor - Diodes Division |
 Description: DIODE AVAL 200V 1.5A DO214ACPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 µs Technology: Avalanche Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V Qualification: AEC-Q101 |
товару немає в наявності |
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BYG10DHE3_A/H | Виробник : Vishay General Semiconductor |
Rectifiers 1.5A,200V,STD,AVAL AEC-Q101 Qualified |
товару немає в наявності |