BYG10GHE3_A/H Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 400V 1.5A DO214AC
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 400 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Technology: Avalanche
Reverse Recovery Time (trr): 4 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
| Кількість | Ціна без ПДВ |
|---|---|
| 1800+ | 10.57 грн |
| 3600+ | 9.24 грн |
| 5400+ | 8.76 грн |
| 9000+ | 7.72 грн |
| 12600+ | 7.42 грн |
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Технічний опис BYG10GHE3_A/H Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 400V 1.5A DO214AC, Mounting Type: Surface Mount, Package / Case: DO-214AC, SMA, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Current - Reverse Leakage @ Vr: 1 µA @ 400 V, Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A, Voltage - DC Reverse (Vr) (Max): 400 V, Grade: Automotive, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: DO-214AC (SMA), Current - Average Rectified (Io): 1.5A, Technology: Avalanche, Reverse Recovery Time (trr): 4 µs, Speed: Standard Recovery >500ns, > 200mA (Io).
Інші пропозиції BYG10GHE3_A/H за ціною від 11.63 грн до 43.10 грн
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BYG10GHE3_A/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVAL 400V 1.5A DO214AC Technology: Avalanche Reverse Recovery Time (trr): 4 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 1 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A Voltage - DC Reverse (Vr) (Max): 400 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AC (SMA) Current - Average Rectified (Io): 1.5A Packaging: Cut Tape (CT) |
на замовлення 12600 шт: термін постачання 21-31 дні (днів) |
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| BYG10GHE3_A/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 400V 1.5A DO214AC
Technology: Avalanche
Reverse Recovery Time (trr): 4 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 400 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Packaging: Cut Tape (CT)
Description: DIODE AVAL 400V 1.5A DO214AC
Technology: Avalanche
Reverse Recovery Time (trr): 4 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 400 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Packaging: Cut Tape (CT)
на замовлення 12600 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 43.10 грн |
| 12+ | 25.57 грн |
| 100+ | 16.37 грн |
| 500+ | 11.63 грн |