BYG10GHM3_A/I Vishay General Semiconductor
| Кількість | Ціна |
|---|---|
| 7+ | 48.20 грн |
| 11+ | 29.33 грн |
| 100+ | 16.37 грн |
| 500+ | 12.54 грн |
| 1000+ | 11.15 грн |
| 2500+ | 10.03 грн |
| 5000+ | 8.92 грн |
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Технічний опис BYG10GHM3_A/I Vishay General Semiconductor
Description: DIODE AVAL 400V 1.5A DO214AC, Qualification: AEC-Q101, Grade: Automotive, Current - Reverse Leakage @ Vr: 1 µA @ 400 V, Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A, Voltage - DC Reverse (Vr) (Max): 400 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: DO-214AC (SMA), Current - Average Rectified (Io): 1.5A, Technology: Avalanche, Reverse Recovery Time (trr): 4 µs, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-214AC, SMA, Packaging: Tape & Reel (TR).
Інші пропозиції BYG10GHM3_A/I
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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BYG10GHM3_A/I | Виробник : Vishay General Semiconductor - Diodes Division |
 Description: DIODE AVAL 400V 1.5A DO214ACQualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 1 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A Voltage - DC Reverse (Vr) (Max): 400 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AC (SMA) Current - Average Rectified (Io): 1.5A Technology: Avalanche Reverse Recovery Time (trr): 4 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Tape & Reel (TR) |
товару немає в наявності |