BYG22BHE3_A/I Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 100V 2A DO214AC
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 2A
Qualification: AEC-Q101
Grade: Automotive
Technology: Avalanche
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
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Технічний опис BYG22BHE3_A/I Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 100V 2A DO214AC, Current - Reverse Leakage @ Vr: 1 µA @ 100 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A, Voltage - DC Reverse (Vr) (Max): 100 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: DO-214AC (SMA), Current - Average Rectified (Io): 2A, Qualification: AEC-Q101, Grade: Automotive, Technology: Avalanche, Reverse Recovery Time (trr): 25 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-214AC, SMA, Packaging: Tape & Reel (TR).
Інші пропозиції BYG22BHE3_A/I
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
BYG22BHE3_A/I | Vishay General Semiconductor |
Rectifiers 2.0A,100V,25NS, AVAL AEC-Q101 Qualified |
товару немає в наявності |
В кошику од. на суму грн. |
| BYG22BHE3_A/I |
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Виробник: Vishay General Semiconductor
Rectifiers 2.0A,100V,25NS, AVAL AEC-Q101 Qualified
Rectifiers 2.0A,100V,25NS, AVAL AEC-Q101 Qualified
товару немає в наявності
В кошику
од. на суму грн.


