Технічний опис BYG22DHM3_A/H Vishay Semiconductors
Description: DIODE AVALANCHE 200V 2A DO214AC, Packaging: Tape & Reel (TR), Package / Case: DO-214AC, SMA, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 25 ns, Technology: Avalanche, Current - Average Rectified (Io): 2A, Supplier Device Package: DO-214AC (SMA), Operating Temperature - Junction: -55°C ~ 150°C, Grade: Automotive, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A, Current - Reverse Leakage @ Vr: 1 µA @ 200 V, Qualification: AEC-Q101.
Інші пропозиції BYG22DHM3_A/H
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
BYG22DHM3_A/H | Vishay General Semiconductor - Diodes Division |
 Description: DIODE AVALANCHE 200V 2A DO214ACPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Avalanche Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 9000 шт В кошику од. на суму грн. |
 |
BYG22DHM3_A/H | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 2A; 25ns; DO214AC,SMA; Ufmax: 1.1V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 25ns Semiconductor structure: single diode Features of semiconductor devices: glass passivated; ultrafast switching Case: DO214AC; SMA Max. forward voltage: 1.1V Max. forward impulse current: 35A |
товару немає в наявності |
Мінімальне замовлення: 9000 шт В кошику од. на суму грн. |
 |
BYG22DHM3_A/H | Vishay |
Diode Switching 200V 2A 2-Pin SMA T/R Automotive AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 9000 шт В кошику од. на суму грн. |
| BYG22DHM3_A/H |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
Description: DIODE AVALANCHE 200V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 9000 шт
В кошику
од. на суму грн.
| BYG22DHM3_A/H |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 25ns; DO214AC,SMA; Ufmax: 1.1V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Case: DO214AC; SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 35A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 25ns; DO214AC,SMA; Ufmax: 1.1V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Case: DO214AC; SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 35A
товару немає в наявності
Мінімальне замовлення: 9000 шт
В кошику
од. на суму грн.
| BYG22DHM3_A/H |
|
Виробник: Vishay
Diode Switching 200V 2A 2-Pin SMA T/R Automotive AEC-Q101
Diode Switching 200V 2A 2-Pin SMA T/R Automotive AEC-Q101
товару немає в наявності
Мінімальне замовлення: 9000 шт
В кошику
од. на суму грн.