BYM10-200-E3/96 Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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Технічний опис BYM10-200-E3/96 Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO213AB, Packaging: Tape & Reel (TR), Package / Case: DO-213AB, MELF (Glass), Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Capacitance @ Vr, F: 8pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: DO-213AB, Operating Temperature - Junction: -65°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A, Current - Reverse Leakage @ Vr: 10 µA @ 200 V.
Інші пропозиції BYM10-200-E3/96 за ціною від 6.70 грн до 31.72 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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BYM10-200-E3/96 | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1A; DO213AB,MELF plastic; Ufmax: 1.1V Mounting: SMD Kind of package: 7 inch reel Load current: 1A Max. forward voltage: 1.1V Max. forward impulse current: 30A Max. off-state voltage: 200V Quantity in set/package: 1500pcs. Case: DO213AB; MELF plastic Features of semiconductor devices: glass passivated Type of diode: rectifying Semiconductor structure: single diode Capacitance: 8pF Leakage current: 50µA |
на замовлення 1625 шт: термін постачання 14-30 дні (днів) |
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BYM10-200-E3/96 | Vishay General Semiconductor |
Rectifiers 200 Volt 1.0 Amp Glass Passivated |
на замовлення 1310 шт: термін постачання 21-30 дні (днів) |
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BYM10-200-E3/96 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 1A DO213AB Packaging: Cut Tape (CT) Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
на замовлення 2620 шт: термін постачання 21-31 дні (днів) |
|
| BYM10-200-E3/96 |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; DO213AB,MELF plastic; Ufmax: 1.1V
Mounting: SMD
Kind of package: 7 inch reel
Load current: 1A
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Max. off-state voltage: 200V
Quantity in set/package: 1500pcs.
Case: DO213AB; MELF plastic
Features of semiconductor devices: glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
Capacitance: 8pF
Leakage current: 50µA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; DO213AB,MELF plastic; Ufmax: 1.1V
Mounting: SMD
Kind of package: 7 inch reel
Load current: 1A
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Max. off-state voltage: 200V
Quantity in set/package: 1500pcs.
Case: DO213AB; MELF plastic
Features of semiconductor devices: glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
Capacitance: 8pF
Leakage current: 50µA
на замовлення 1625 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 18+ | 25.58 грн |
| 25+ | 17.56 грн |
| 100+ | 12.05 грн |
| 500+ | 8.14 грн |
| 1000+ | 6.70 грн |
| BYM10-200-E3/96 |
|
Виробник: Vishay General Semiconductor
Rectifiers 200 Volt 1.0 Amp Glass Passivated
Rectifiers 200 Volt 1.0 Amp Glass Passivated
на замовлення 1310 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 11+ | 31.08 грн |
| 14+ | 24.64 грн |
| 100+ | 14.66 грн |
| 500+ | 11.00 грн |
| 1000+ | 8.25 грн |
| 1500+ | 7.12 грн |
| BYM10-200-E3/96 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO213AB
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE GEN PURP 200V 1A DO213AB
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 2620 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 31.72 грн |
| 13+ | 24.59 грн |
| 100+ | 16.76 грн |
| 500+ | 11.79 грн |