BYM11-1000-E3/97 Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 5000+ | 8.85 грн |
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Технічний опис BYM11-1000-E3/97 Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO213AB, Current - Reverse Leakage @ Vr: 5 µA @ 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A, Voltage - DC Reverse (Vr) (Max): 1000 V, Operating Temperature - Junction: -65°C ~ 175°C, Supplier Device Package: DO-213AB, Current - Average Rectified (Io): 1A, Capacitance @ Vr, F: 15pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 500 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-213AB, MELF (Glass), Packaging: Tape & Reel (TR).
Інші пропозиції BYM11-1000-E3/97 за ціною від 8.09 грн до 34.81 грн
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BYM11-1000-E3/97 | Vishay General Semiconductor |
Rectifiers 1000 Volt 1.0A 500ns Glass Passivated |
на замовлення 8469 шт: термін постачання 21-30 дні (днів) |
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BYM11-1000-E3/97 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 1A DO213AB Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 1000 V Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-213AB Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 15pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 500 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-213AB, MELF (Glass) Packaging: Cut Tape (CT) |
на замовлення 9900 шт: термін постачання 21-31 дні (днів) |
|
| BYM11-1000-E3/97 |
|
Виробник: Vishay General Semiconductor
Rectifiers 1000 Volt 1.0A 500ns Glass Passivated
Rectifiers 1000 Volt 1.0A 500ns Glass Passivated
на замовлення 8469 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 31.01 грн |
| 16+ | 20.54 грн |
| 100+ | 14.21 грн |
| 500+ | 10.76 грн |
| 1000+ | 8.72 грн |
| 2500+ | 8.65 грн |
| 5000+ | 8.09 грн |
| BYM11-1000-E3/97 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Cut Tape (CT)
Description: DIODE GEN PURP 1KV 1A DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Cut Tape (CT)
на замовлення 9900 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 34.81 грн |
| 12+ | 25.60 грн |
| 100+ | 15.34 грн |
| 500+ | 13.32 грн |
| 1000+ | 9.06 грн |
| 2000+ | 8.34 грн |