BYM12-200-E3/96 Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 7.58 грн |
| 3000+ | 7.20 грн |
Відгуки про товар
Написати відгук
Технічний опис BYM12-200-E3/96 Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 1A DO213AB, Packaging: Tape & Reel (TR), Package / Case: DO-213AB, MELF (Glass), Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 50 ns, Technology: Standard, Capacitance @ Vr, F: 20pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: DO-213AB, Operating Temperature - Junction: -65°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A, Current - Reverse Leakage @ Vr: 5 µA @ 200 V.
Інші пропозиції BYM12-200-E3/96 за ціною від 11.94 грн до 30.22 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BYM12-200-E3/96 | VISHAY |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 1A; 50ns; DO213AB,GL41; Ufmax: 1V Mounting: SMD Kind of package: 7 inch reel Load current: 1A Max. forward voltage: 1V Max. forward impulse current: 30A Max. off-state voltage: 200V Quantity in set/package: 1500pcs. Case: DO213AB; GL41 Features of semiconductor devices: glass passivated; ultrafast switching Type of diode: rectifying Semiconductor structure: single diode Capacitance: 20pF Reverse recovery time: 50ns Leakage current: 50µA |
на замовлення 342 шт: термін постачання 14-30 дні (днів) |
|
||||||||||
|
BYM12-200-E3/96 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 200V 1A DO213ABCurrent - Reverse Leakage @ Vr: 5 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Voltage - DC Reverse (Vr) (Max): 200 V Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-213AB Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 20pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-213AB, MELF (Glass) Packaging: Cut Tape (CT) |
на замовлення 15419 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
|
BYM12-200-E3/96 | Vishay General Semiconductor |
Rectifiers 1.0 Amp 200V 50ns |
на замовлення 2405 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. | ||||||||||
|
BYM12-200-E3/96 | Vishay Semiconductors |
Rectifiers 1.0 Amp 200V 50ns |
на замовлення 4405 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| BYM12-200-E3/96 |
![]() |
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 50ns; DO213AB,GL41; Ufmax: 1V
Mounting: SMD
Kind of package: 7 inch reel
Load current: 1A
Max. forward voltage: 1V
Max. forward impulse current: 30A
Max. off-state voltage: 200V
Quantity in set/package: 1500pcs.
Case: DO213AB; GL41
Features of semiconductor devices: glass passivated; ultrafast switching
Type of diode: rectifying
Semiconductor structure: single diode
Capacitance: 20pF
Reverse recovery time: 50ns
Leakage current: 50µA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 50ns; DO213AB,GL41; Ufmax: 1V
Mounting: SMD
Kind of package: 7 inch reel
Load current: 1A
Max. forward voltage: 1V
Max. forward impulse current: 30A
Max. off-state voltage: 200V
Quantity in set/package: 1500pcs.
Case: DO213AB; GL41
Features of semiconductor devices: glass passivated; ultrafast switching
Type of diode: rectifying
Semiconductor structure: single diode
Capacitance: 20pF
Reverse recovery time: 50ns
Leakage current: 50µA
на замовлення 342 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 27.68 грн |
| 21+ | 19.90 грн |
| 23+ | 18.07 грн |
| 50+ | 14.43 грн |
| 100+ | 12.93 грн |
| BYM12-200-E3/96 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 1A DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Cut Tape (CT)
Description: DIODE STANDARD 200V 1A DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Cut Tape (CT)
на замовлення 15419 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 30.22 грн |
| 17+ | 18.36 грн |
| 100+ | 15.67 грн |
| 500+ | 11.94 грн |
| BYM12-200-E3/96 |
![]() |
Виробник: Vishay General Semiconductor
Rectifiers 1.0 Amp 200V 50ns
Rectifiers 1.0 Amp 200V 50ns
на замовлення 2405 шт:
термін постачання 21-30 дні (днів)
| BYM12-200-E3/96 |
![]() |
Виробник: Vishay Semiconductors
Rectifiers 1.0 Amp 200V 50ns
Rectifiers 1.0 Amp 200V 50ns
на замовлення 4405 шт:
термін постачання 21-30 дні (днів)




