BYM36E-TAP Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1000V 2.9A SOD64
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.78 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-64
Current - Average Rectified (Io): 2.9A
Technology: Avalanche
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: SOD-64, Axial
Packaging: Tape & Box (TB)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 32.00 грн |
| 5000+ | 29.42 грн |
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Технічний опис BYM36E-TAP Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1000V 2.9A SOD64, Current - Reverse Leakage @ Vr: 5 µA @ 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.78 V @ 3 A, Voltage - DC Reverse (Vr) (Max): 1000 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: SOD-64, Current - Average Rectified (Io): 2.9A, Technology: Avalanche, Reverse Recovery Time (trr): 150 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: SOD-64, Axial, Packaging: Tape & Box (TB).
Інші пропозиції BYM36E-TAP за ціною від 34.19 грн до 92.07 грн
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BYM36E-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 1000V 2.9A SOD64 Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.78 V @ 3 A Voltage - DC Reverse (Vr) (Max): 1000 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SOD-64 Current - Average Rectified (Io): 2.9A Technology: Avalanche Reverse Recovery Time (trr): 150 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: SOD-64, Axial Packaging: Cut Tape (CT) |
на замовлення 1800 шт: термін постачання 21-31 дні (днів) |
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BYM36E-TAP | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 2.9A; Ifsm: 65A; SOD64; Ammo Pack; 150ns Type of diode: rectifying Max. off-state voltage: 1kV Load current: 2.9A Semiconductor structure: single diode Case: SOD64 Mounting: THT Max. forward voltage: 1.28V Max. forward impulse current: 65A Features of semiconductor devices: avalanche breakdown effect; glass passivated Kind of package: Ammo Pack Reverse recovery time: 150ns Leakage current: 0.1mA |
на замовлення 1942 шт: термін постачання 14-30 дні (днів) |
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BYM36E-TAP | Vishay Semiconductors |
Rectifiers 1000 Volt 2.9 Amp 65 Amp IFSM |
на замовлення 14950 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| BYM36E-TAP |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1000V 2.9A SOD64
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.78 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-64
Current - Average Rectified (Io): 2.9A
Technology: Avalanche
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: SOD-64, Axial
Packaging: Cut Tape (CT)
Description: DIODE AVALANCHE 1000V 2.9A SOD64
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.78 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-64
Current - Average Rectified (Io): 2.9A
Technology: Avalanche
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: SOD-64, Axial
Packaging: Cut Tape (CT)
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 88.61 грн |
| 10+ | 61.33 грн |
| 100+ | 51.03 грн |
| 500+ | 37.72 грн |
| 1000+ | 34.19 грн |
| BYM36E-TAP |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 2.9A; Ifsm: 65A; SOD64; Ammo Pack; 150ns
Type of diode: rectifying
Max. off-state voltage: 1kV
Load current: 2.9A
Semiconductor structure: single diode
Case: SOD64
Mounting: THT
Max. forward voltage: 1.28V
Max. forward impulse current: 65A
Features of semiconductor devices: avalanche breakdown effect; glass passivated
Kind of package: Ammo Pack
Reverse recovery time: 150ns
Leakage current: 0.1mA
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 2.9A; Ifsm: 65A; SOD64; Ammo Pack; 150ns
Type of diode: rectifying
Max. off-state voltage: 1kV
Load current: 2.9A
Semiconductor structure: single diode
Case: SOD64
Mounting: THT
Max. forward voltage: 1.28V
Max. forward impulse current: 65A
Features of semiconductor devices: avalanche breakdown effect; glass passivated
Kind of package: Ammo Pack
Reverse recovery time: 150ns
Leakage current: 0.1mA
на замовлення 1942 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 92.07 грн |
| 10+ | 58.41 грн |
| 100+ | 46.30 грн |
| 500+ | 38.77 грн |
| 1000+ | 38.52 грн |
| BYM36E-TAP |
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Виробник: Vishay Semiconductors
Rectifiers 1000 Volt 2.9 Amp 65 Amp IFSM
Rectifiers 1000 Volt 2.9 Amp 65 Amp IFSM
на замовлення 14950 шт:
термін постачання 21-30 дні (днів)