BYT51K-TAP Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 1.5A SOD57
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1.5A
Technology: Avalanche
Reverse Recovery Time (trr): 4 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Box (TB)
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Технічний опис BYT51K-TAP Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 1.5A SOD57, Current - Reverse Leakage @ Vr: 1 µA @ 800 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A, Voltage - DC Reverse (Vr) (Max): 800 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: SOD-57, Current - Average Rectified (Io): 1.5A, Technology: Avalanche, Reverse Recovery Time (trr): 4 µs, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: SOD-57, Axial, Packaging: Tape & Box (TB).
Інші пропозиції BYT51K-TAP
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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BYT51K-TAP | Виробник : Vishay Semiconductors |
Rectifiers 1.5 Amp 800 Volt 50 Amp IFSM |
товару немає в наявності |