Технічний опис BYT53D-TAP
Description: DIODE AVALANCHE 200V 1.9A SOD57, Current - Reverse Leakage @ Vr: 5 µA @ 200 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A, Voltage - DC Reverse (Vr) (Max): 200 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: SOD-57, Current - Average Rectified (Io): 1.9A, Technology: Avalanche, Reverse Recovery Time (trr): 50 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: SOD-57, Axial, Packaging: Tape & Box (TB).
Інші пропозиції BYT53D-TAP
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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BYT53D-TAP | Виробник : Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 200V 1.9A SOD57Current - Reverse Leakage @ Vr: 5 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SOD-57 Current - Average Rectified (Io): 1.9A Technology: Avalanche Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: SOD-57, Axial Packaging: Tape & Box (TB) |
товару немає в наявності |
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BYT53D-TAP | Виробник : Vishay Semiconductors |
Rectifiers 1.4 Amp 200 Volt 50 Amp IFSM |
товару немає в наявності |


