BYT53G-TAP VISHAY
Виробник: VISHAYCategory: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1.9A; Ammo Pack; Ifsm: 50A; SOD57; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1.9A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated
Kind of package: Ammo Pack
Max. forward impulse current: 50A
Case: SOD57
Max. forward voltage: 0.9V
Leakage current: 0.2mA
Reverse recovery time: 50ns
кількість в упаковці: 1 шт
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Технічний опис BYT53G-TAP VISHAY
Category: THT universal diodes, Description: Diode: rectifying; THT; 400V; 1.9A; Ammo Pack; Ifsm: 50A; SOD57; 50ns, Type of diode: rectifying, Mounting: THT, Max. off-state voltage: 0.4kV, Load current: 1.9A, Semiconductor structure: single diode, Features of semiconductor devices: avalanche breakdown effect; glass passivated, Kind of package: Ammo Pack, Max. forward impulse current: 50A, Case: SOD57, Max. forward voltage: 0.9V, Leakage current: 0.2mA, Reverse recovery time: 50ns, кількість в упаковці: 1 шт.
Інші пропозиції BYT53G-TAP
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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BYT53G-TAP | Виробник : Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 400V 1.9A SOD57 Packaging: Tape & Box (TB) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Avalanche Current - Average Rectified (Io): 1.9A Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
товару немає в наявності |
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BYT53G-TAP | Виробник : Vishay Semiconductors |
Rectifiers 1.4 Amp 400 Volt 50 Amp IFSM |
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BYT53G-TAP | Виробник : VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 1.9A; Ammo Pack; Ifsm: 50A; SOD57; 50ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 1.9A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; glass passivated Kind of package: Ammo Pack Max. forward impulse current: 50A Case: SOD57 Max. forward voltage: 0.9V Leakage current: 0.2mA Reverse recovery time: 50ns |
товару немає в наявності |