BYT53G-TAP Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 400V 1.9A SOD57
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1.9A
Technology: Avalanche
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Box (TB)
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Технічний опис BYT53G-TAP Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 400V 1.9A SOD57, Current - Reverse Leakage @ Vr: 5 µA @ 400 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A, Voltage - DC Reverse (Vr) (Max): 400 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: SOD-57, Current - Average Rectified (Io): 1.9A, Technology: Avalanche, Reverse Recovery Time (trr): 50 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: SOD-57, Axial, Packaging: Tape & Box (TB).
Інші пропозиції BYT53G-TAP
| Фото | Назва | Виробник | Інформація |
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BYT53G-TAP | Виробник : Vishay Semiconductors |
Rectifiers 1.4 Amp 400 Volt 50 Amp IFSM |
товару немає в наявності |
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BYT53G-TAP | Виробник : VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 1.9A; Ammo Pack; Ifsm: 50A; SOD57; 50ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 1.9A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; glass passivated Kind of package: Ammo Pack Max. forward impulse current: 50A Case: SOD57 Max. forward voltage: 0.9V Leakage current: 0.2mA Reverse recovery time: 50ns |
товару немає в наявності |