BYV16-TAP Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 1.5A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE AVALANCHE 1KV 1.5A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
5000+ | 16.33 грн |
10000+ | 14.56 грн |
Відгуки про товар
Написати відгук
Технічний опис BYV16-TAP Vishay General Semiconductor - Diodes Division
Category: THT universal diodes, Description: Diode: rectifying; THT; 1kV; 1.5A; Ammo Pack; Ifsm: 40A; SOD57; 300ns, Max. off-state voltage: 1kV, Load current: 1.5A, Max. forward impulse current: 40A, Case: SOD57, Max. forward voltage: 1.5V, Kind of package: Ammo Pack, Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated, Leakage current: 0.15mA, Type of diode: rectifying, Mounting: THT, Max. load current: 9A, Semiconductor structure: single diode, Reverse recovery time: 300ns, кількість в упаковці: 25000 шт.
Інші пропозиції BYV16-TAP за ціною від 14.45 грн до 49.1 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
BYV16-TAP | Виробник : Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 1KV 1.5A SOD57 Packaging: Cut Tape (CT) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Avalanche Current - Average Rectified (Io): 1.5A Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
на замовлення 8996 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
BYV16-TAP | Виробник : Vishay Semiconductors | Rectifiers 1000 Volt 1.5 Amp 40 Amp IFSM |
на замовлення 24091 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||||
BYV16-TAP | Виробник : VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 1.5A; Ammo Pack; Ifsm: 40A; SOD57; 300ns Max. off-state voltage: 1kV Load current: 1.5A Max. forward impulse current: 40A Case: SOD57 Max. forward voltage: 1.5V Kind of package: Ammo Pack Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated Leakage current: 0.15mA Type of diode: rectifying Mounting: THT Max. load current: 9A Semiconductor structure: single diode Reverse recovery time: 300ns кількість в упаковці: 25000 шт |
товар відсутній |
||||||||||||||||||
BYV16-TAP | Виробник : Vishay | Diode Switching 1KV 1.5A 2-Pin SOD-57 Ammo |
товар відсутній |
||||||||||||||||||
BYV16-TAP | Виробник : Vishay | Diode Switching 1KV 1.5A 2-Pin SOD-57 Ammo |
товар відсутній |
||||||||||||||||||
BYV16-TAP | Виробник : VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 1.5A; Ammo Pack; Ifsm: 40A; SOD57; 300ns Max. off-state voltage: 1kV Load current: 1.5A Max. forward impulse current: 40A Case: SOD57 Max. forward voltage: 1.5V Kind of package: Ammo Pack Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated Leakage current: 0.15mA Type of diode: rectifying Mounting: THT Max. load current: 9A Semiconductor structure: single diode Reverse recovery time: 300ns |
товар відсутній |