Технічний опис BYV27-050-TAP Vishay
Category: THT universal diodes, Description: Diode: rectifying; THT; 50V; 2A; Ammo Pack; Ifsm: 50A; SOD57; 25ns, Type of diode: rectifying, Mounting: THT, Max. off-state voltage: 50V, Load current: 2A, Semiconductor structure: single diode, Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching, Kind of package: Ammo Pack, Max. forward impulse current: 50A, Case: SOD57, Max. forward voltage: 1.07V, Leakage current: 0.15mA, Reverse recovery time: 25ns, Max. load current: 15A.
Інші пропозиції BYV27-050-TAP
| Фото | Назва | Виробник | Інформація |
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BYV27-050-TAP | Виробник : Vishay General Semiconductor - Diodes Division |
 Description: DIODE AVALANCHE 55V 2A SOD57Packaging: Tape & Box (TB) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Avalanche Current - Average Rectified (Io): 2A Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 55 V Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 3 A Current - Reverse Leakage @ Vr: 1 µA @ 55 V |
товару немає в наявності |
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BYV27-050-TAP | Виробник : Vishay Semiconductors |
Rectifiers 2.0 Amp 50 Volt 50 Amp IFSM |
товару немає в наявності |
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BYV27-050-TAP | Виробник : VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 50V; 2A; Ammo Pack; Ifsm: 50A; SOD57; 25ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 50V Load current: 2A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching Kind of package: Ammo Pack Max. forward impulse current: 50A Case: SOD57 Max. forward voltage: 1.07V Leakage current: 0.15mA Reverse recovery time: 25ns Max. load current: 15A |
товару немає в наявності |