Технічний опис BYV30-600PQ WeEn Semiconductors
Description: DIODE GEN PURP 600V 30A TO220AC, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 75 ns, Technology: Standard, Current - Average Rectified (Io): 30A, Supplier Device Package: TO-220AC, Operating Temperature - Junction: 175°C (Max), Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 30 A, Current - Reverse Leakage @ Vr: 10 µA @ 600 V.
Інші пропозиції BYV30-600PQ
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BYV30-600PQ | Виробник : WeEn Semiconductors |
 Description: DIODE GEN PURP 600V 30A TO220ACPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-220AC Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 30 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
товару немає в наявності |
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BYV30-600PQ | Виробник : WeEn Semiconductors |
Rectifiers BYV30-600PQ/TO-220AC/STANDARD M |
товару немає в наявності |