BYV30W-600PQ WeEn Semiconductors

Description: DIODE GEN PURP 600V 30A TO247-2, Current - Reverse Leakage @ Vr: 10 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 30 A, Voltage - DC Reverse (Vr) (Max): 600 V, Operating Temperature - Junction: 175°C (Max), Supplier Device Package: TO-247-2, Current - Average Rectified (Io): 30A, Technology: Standard, Reverse Recovery Time (trr): 75 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: TO-247-2, Packaging: Tube.