BYV32E-300PQ WeEn Semiconductors
Виробник: WeEn SemiconductorsDescription: DIODE ARRAY GP 300V 10A TO-220E
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220E
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 300 V
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Технічний опис BYV32E-300PQ WeEn Semiconductors
Description: DIODE ARRAY GP 300V 10A TO-220E, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 35 ns, Technology: Standard, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 10A, Supplier Device Package: TO-220E, Operating Temperature - Junction: 175°C (Max), Part Status: Active, Voltage - DC Reverse (Vr) (Max): 300 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A, Current - Reverse Leakage @ Vr: 20 µA @ 300 V.
Інші пропозиції BYV32E-300PQ
| Фото | Назва | Виробник | Інформація |
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BYV32E-300PQ | Виробник : WeEn Semiconductors |
Small Signal Switching Diodes BYV32E-300P/TO220/STANDARD MARKING * HORIZONTAL, RAIL PACK |
товару немає в наявності |
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BYV32E-300PQ | Виробник : WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 220A; SOT78,TO220AB Type of diode: rectifying Mounting: THT Max. off-state voltage: 300V Load current: 10A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 220A Case: SOT78; TO220AB Max. forward voltage: 1.25V Max. load current: 20A Reverse recovery time: 25ns Heatsink thickness: 1.25...1.4mm |
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