
BYV34G-600,127 WeEn Semiconductors

Description: DIODE ARRAY GP 600V 20A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: I2PAK
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.48 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
на замовлення 5990 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна |
---|---|
2+ | 208.97 грн |
50+ | 99.51 грн |
100+ | 89.60 грн |
500+ | 67.78 грн |
1000+ | 62.54 грн |
2000+ | 58.14 грн |
5000+ | 55.22 грн |
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Технічний опис BYV34G-600,127 WeEn Semiconductors
Description: DIODE ARRAY GP 600V 20A I2PAK, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 60 ns, Technology: Standard, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 20A, Supplier Device Package: I2PAK, Operating Temperature - Junction: 150°C (Max), Part Status: Active, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.48 V @ 20 A, Current - Reverse Leakage @ Vr: 50 µA @ 600 V.
Інші пропозиції BYV34G-600,127
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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BYV34G-600,127 | Виробник : WeEn Semiconductors |
![]() Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 120A; I2PAK Max. off-state voltage: 0.6kV Max. load current: 20A Max. forward voltage: 0.92V Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 120A Kind of package: tube Type of diode: rectifying Case: I2PAK Features of semiconductor devices: ultrafast switching Mounting: THT кількість в упаковці: 2000 шт |
товару немає в наявності |
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BYV34G-600,127 | Виробник : WeEn Semiconductors |
![]() |
товару немає в наявності |
|
![]() |
BYV34G-600,127 | Виробник : WeEn Semiconductors |
![]() Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 120A; I2PAK Max. off-state voltage: 0.6kV Max. load current: 20A Max. forward voltage: 0.92V Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 120A Kind of package: tube Type of diode: rectifying Case: I2PAK Features of semiconductor devices: ultrafast switching Mounting: THT |
товару немає в наявності |