Технічний опис BYVB32-100HE3_A/P Vishay
Description: DIODE ARRAY GP 100V 18A TO263AB, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 25 ns, Technology: Standard, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 18A, Supplier Device Package: TO-263AB (D2PAK), Operating Temperature - Junction: -65°C ~ 150°C, Grade: Automotive, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 20 A, Current - Reverse Leakage @ Vr: 10 µA @ 100 V, Qualification: AEC-Q101.
Інші пропозиції BYVB32-100HE3_A/P
Фото | Назва | Виробник | Інформація |
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BYVB32-100HE3_A/P | Виробник : Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 18A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -65°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V Qualification: AEC-Q101 |
товару немає в наявності |
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BYVB32-100HE3_A/P | Виробник : Vishay General Semiconductor |
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товару немає в наявності |