Технічний опис BZT52B5V1-G Taiwan Semiconductor
Description: DIODE ZENER 5.1V 410MW SOD123, Current - Reverse Leakage @ Vr: 2 µA @ 2 V, Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA, Power - Max: 410 mW, Supplier Device Package: SOD-123, Impedance (Max) (Zzt): 60 Ohms, Voltage - Zener (Nom) (Vz): 5.1 V, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOD-123, Tolerance: ±2%, Packaging: Tape & Reel (TR).
Інші пропозиції BZT52B5V1-G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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BZT52B5V1-G | Taiwan Semiconductor Corporation |
 Description: DIODE ZENER 5.1V 410MW SOD123Current - Reverse Leakage @ Vr: 2 µA @ 2 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 410 mW Supplier Device Package: SOD-123 Impedance (Max) (Zzt): 60 Ohms Voltage - Zener (Nom) (Vz): 5.1 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123 Tolerance: ±2% Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. |
| BZT52B5V1-G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 5.1V 410MW SOD123
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 410 mW
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 60 Ohms
Voltage - Zener (Nom) (Vz): 5.1 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 5.1V 410MW SOD123
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 410 mW
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 60 Ohms
Voltage - Zener (Nom) (Vz): 5.1 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.