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Технічний опис C2M0045170P Wolfspeed
Description: SICFET N-CH 1700V 72A TO247-4, Input Capacitance (Ciss) (Max) @ Vds: 3672 pF @ 1000 V, Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 20 V, Drain to Source Voltage (Vdss): 1700 V, Vgs (Max): +25V, -10V, Drive Voltage (Max Rds On, Min Rds On): 20V, Supplier Device Package: TO-247-4L, Vgs(th) (Max) @ Id: 4V @ 18mA, Power Dissipation (Max): 520W (Tc), Rds On (Max) @ Id, Vgs: 59mOhm @ 50A, 20V, Current - Continuous Drain (Id) @ 25°C: 72A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-4, Packaging: Tube.
Інші пропозиції C2M0045170P
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
|
C2M0045170P | Wolfspeed, Inc. |
Description: SICFET N-CH 1700V 72A TO247-4Input Capacitance (Ciss) (Max) @ Vds: 3672 pF @ 1000 V Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 20 V Drain to Source Voltage (Vdss): 1700 V Vgs (Max): +25V, -10V Drive Voltage (Max Rds On, Min Rds On): 20V Supplier Device Package: TO-247-4L Vgs(th) (Max) @ Id: 4V @ 18mA Power Dissipation (Max): 520W (Tc) Rds On (Max) @ Id, Vgs: 59mOhm @ 50A, 20V Current - Continuous Drain (Id) @ 25°C: 72A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 Packaging: Tube |
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| C2M0045170P |
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Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 1700V 72A TO247-4
Input Capacitance (Ciss) (Max) @ Vds: 3672 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 20 V
Drain to Source Voltage (Vdss): 1700 V
Vgs (Max): +25V, -10V
Drive Voltage (Max Rds On, Min Rds On): 20V
Supplier Device Package: TO-247-4L
Vgs(th) (Max) @ Id: 4V @ 18mA
Power Dissipation (Max): 520W (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 50A, 20V
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Description: SICFET N-CH 1700V 72A TO247-4
Input Capacitance (Ciss) (Max) @ Vds: 3672 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 20 V
Drain to Source Voltage (Vdss): 1700 V
Vgs (Max): +25V, -10V
Drive Voltage (Max Rds On, Min Rds On): 20V
Supplier Device Package: TO-247-4L
Vgs(th) (Max) @ Id: 4V @ 18mA
Power Dissipation (Max): 520W (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 50A, 20V
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
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