C2M0160120D

Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 17.7A; 125W; TO247-3
Type of transistor: N-MOSFET
Technology: SiC; Z-FET™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 17.7A
Power dissipation: 125W
Case: TO247-3
Gate-source voltage: -10...25V
On-state resistance: 196mΩ
Mounting: THT
Gate charge: 34nC
Kind of channel: enhancement
Reverse recovery time: 23ns

Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 1200V 19A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 527 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 32.6 nC @ 20 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +25V, -10V
Drive Voltage (Max Rds On, Min Rds On): 20V
Part Status: Not For New Designs
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 10A, 20V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube

Виробник: Wolfspeed
SiC MOSFETs SIC MOSFET 1200V RDS ON 160 mOhm