Технічний опис C2M1000170D CREE
Description: SICFET N-CH 1700V 4.9A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc), Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2A, 20V, Power Dissipation (Max): 69W (Tc), Vgs(th) (Max) @ Id: 4V @ 500µA, Supplier Device Package: TO-247-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 1700 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 191 pF @ 1000 V.
Інші пропозиції C2M1000170D
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C2M1000170D | Виробник : Wolfspeed, Inc. |
 Description: SICFET N-CH 1700V 4.9A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc) Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2A, 20V Power Dissipation (Max): 69W (Tc) Vgs(th) (Max) @ Id: 4V @ 500µA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1700 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 191 pF @ 1000 V |
товару немає в наявності |
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C2M1000170D | Виробник : Wolfspeed |
SiC MOSFETs SIC MOSFET 1700V RDS ON 1 Ohm |
товару немає в наявності |