C3M0025065J1-TR Wolfspeed, Inc.
Виробник: Wolfspeed, Inc.
Description: SIC, MOSFET 25 M, 650V TO-263-7X
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 15 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +19V, -8V
Drive Voltage (Max Rds On, Min Rds On): 15V
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 3.6V @ 9.22mA
Power Dissipation (Max): 271W (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
| Кількість | Ціна |
|---|---|
| 1+ | 1392.05 грн |
| 10+ | 959.56 грн |
| 100+ | 880.91 грн |
Відгуки про товар
Написати відгук
Технічний опис C3M0025065J1-TR Wolfspeed, Inc.
Description: SIC, MOSFET 25 M, 650V TO-263-7X, Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 15 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): +19V, -8V, Drive Voltage (Max Rds On, Min Rds On): 15V, Supplier Device Package: TO-263-7, Vgs(th) (Max) @ Id: 3.6V @ 9.22mA, Power Dissipation (Max): 271W (Tc), Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Packaging: Tape & Reel (TR).
Інші пропозиції C3M0025065J1-TR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
|
C3M0025065J1-TR | Виробник : Wolfspeed, Inc. |
Description: SIC, MOSFET 25 M, 650V TO-263-7XInput Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 15 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): +19V, -8V Drive Voltage (Max Rds On, Min Rds On): 15V Supplier Device Package: TO-263-7 Vgs(th) (Max) @ Id: 3.6V @ 9.22mA Power Dissipation (Max): 271W (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Tape & Reel (TR) |
товару немає в наявності |
|
|
C3M0025065J1-TR | Виробник : Wolfspeed |
SiC MOSFETs SiC, MOSFET 25 mohm, 650V TO-263-7XL, T&R, Industrial |
товару немає в наявності |
