C3M0040120J1 Wolfspeed, Inc.

Description: 1200V 40 M SIC MOSFET, Rds On (Max) @ Id, Vgs: 53.5mOhm @ 33.3A, 15V, Current - Continuous Drain (Id) @ 25°C: 64A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 1000 V, Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 15 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +15V, -4V, Drive Voltage (Max Rds On, Min Rds On): 15V, Part Status: Active, Supplier Device Package: TO-263-7, Vgs(th) (Max) @ Id: 3.6V @ 9.2mA, Power Dissipation (Max): 272W (Tc).