Технічний опис C3M0040120K Wolfspeed
Description: 1200V 40MOHM SIC MOSFET, Packaging: Tube, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +15V, -4V, Drive Voltage (Max Rds On, Min Rds On): 15V, Supplier Device Package: TO-247-4L, Vgs(th) (Max) @ Id: 3.6V @ 9.2mA, Power Dissipation (Max): 326W (Tc), Rds On (Max) @ Id, Vgs: 53.5mOhm @ 33.3A, 15V, Current - Continuous Drain (Id) @ 25°C: 66A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -40°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-4, Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 1000 V, Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 15 V.
Інші пропозиції C3M0040120K за ціною від 1024.83 грн до 2025.38 грн
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C3M0040120K | Виробник : Wolfspeed(CREE) |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 48A; Idm: 223A; 326W Type of transistor: N-MOSFET Technology: C3M™; SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 48A Pulsed drain current: 223A Power dissipation: 326W Case: TO247-4 Gate-source voltage: -8...19V On-state resistance: 68mΩ Mounting: THT Gate charge: 99nC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Reverse recovery time: 30ns |
на замовлення 25 шт: термін постачання 14-30 дні (днів) |
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C3M0040120K | Виробник : Wolfspeed, Inc. |
Description: 1200V 40MOHM SIC MOSFET Packaging: Tube Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +15V, -4V Drive Voltage (Max Rds On, Min Rds On): 15V Supplier Device Package: TO-247-4L Vgs(th) (Max) @ Id: 3.6V @ 9.2mA Power Dissipation (Max): 326W (Tc) Rds On (Max) @ Id, Vgs: 53.5mOhm @ 33.3A, 15V Current - Continuous Drain (Id) @ 25°C: 66A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 1000 V Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 15 V |
на замовлення 1791 шт: термін постачання 21-31 дні (днів) |
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