C3M0040120K Wolfspeed(CREE)
Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 48A; Idm: 223A; 326W
Technology: C3M™; SiC
Kind of channel: enhancement
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Case: TO247-4
Polarisation: unipolar
Gate-source voltage: -8...19V
Reverse recovery time: 30ns
Gate charge: 99nC
On-state resistance: 68mΩ
Drain current: 48A
Power dissipation: 326W
Pulsed drain current: 223A
Drain-source voltage: 1.2kV
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1003.62 грн |
| 2+ | 884.67 грн |
| 5+ | 824.97 грн |
| 10+ | 795.95 грн |
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Технічний опис C3M0040120K Wolfspeed(CREE)
Description: 1200V 40MOHM SIC MOSFET, Packaging: Tube, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +15V, -4V, Drive Voltage (Max Rds On, Min Rds On): 15V, Supplier Device Package: TO-247-4L, Vgs(th) (Max) @ Id: 3.6V @ 9.2mA, Power Dissipation (Max): 326W (Tc), Rds On (Max) @ Id, Vgs: 53.5mOhm @ 33.3A, 15V, Current - Continuous Drain (Id) @ 25°C: 66A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -40°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-4, Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 1000 V, Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 15 V.
Інші пропозиції C3M0040120K за ціною від 1192.48 грн до 2002.36 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||
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C3M0040120K | Wolfspeed, Inc. |
Description: 1200V 40MOHM SIC MOSFET Packaging: Tube Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +15V, -4V Drive Voltage (Max Rds On, Min Rds On): 15V Supplier Device Package: TO-247-4L Vgs(th) (Max) @ Id: 3.6V @ 9.2mA Power Dissipation (Max): 326W (Tc) Rds On (Max) @ Id, Vgs: 53.5mOhm @ 33.3A, 15V Current - Continuous Drain (Id) @ 25°C: 66A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 1000 V Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 15 V |
на замовлення 1791 шт: термін постачання 21-31 дні (днів) |
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C3M0040120K | Wolfspeed |
SiC MOSFETs SiC, MOSFET, 40mO, 1200V, TO-247-4, Industrial |
на замовлення 265 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| C3M0040120K |
|
Виробник: Wolfspeed, Inc.
Description: 1200V 40MOHM SIC MOSFET
Packaging: Tube
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +15V, -4V
Drive Voltage (Max Rds On, Min Rds On): 15V
Supplier Device Package: TO-247-4L
Vgs(th) (Max) @ Id: 3.6V @ 9.2mA
Power Dissipation (Max): 326W (Tc)
Rds On (Max) @ Id, Vgs: 53.5mOhm @ 33.3A, 15V
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 15 V
Description: 1200V 40MOHM SIC MOSFET
Packaging: Tube
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +15V, -4V
Drive Voltage (Max Rds On, Min Rds On): 15V
Supplier Device Package: TO-247-4L
Vgs(th) (Max) @ Id: 3.6V @ 9.2mA
Power Dissipation (Max): 326W (Tc)
Rds On (Max) @ Id, Vgs: 53.5mOhm @ 33.3A, 15V
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 15 V
на замовлення 1791 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2002.36 грн |
| 30+ | 1247.83 грн |
| 120+ | 1192.48 грн |
| C3M0040120K |
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Виробник: Wolfspeed
SiC MOSFETs SiC, MOSFET, 40mO, 1200V, TO-247-4, Industrial
SiC MOSFETs SiC, MOSFET, 40mO, 1200V, TO-247-4, Industrial
на замовлення 265 шт:
термін постачання 21-30 дні (днів)