C3M0060065J Wolfspeed, Inc.
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 650V 36A TO263-7
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 600 V
| Кількість | Ціна |
|---|---|
| 1+ | 634.11 грн |
| 50+ | 342.64 грн |
| 100+ | 342.47 грн |
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Технічний опис C3M0060065J Wolfspeed, Inc.
Description: SICFET N-CH 650V 36A TO263-7, Packaging: Tube, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 36A (Tc), Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V, Power Dissipation (Max): 136W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 5mA, Supplier Device Package: TO-263-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +15V, -4V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 600 V.
Інші пропозиції C3M0060065J за ціною від 333.03 грн до 823.41 грн
| Фото | Назва | Виробник | Інформація |
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Ціна | ||||||||||
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C3M0060065J | Виробник : Wolfspeed |
SiC MOSFETs SiC, MOSFET, 60mohm, 650V, TO-263-7, Industrial |
на замовлення 1168 шт: термін постачання 21-30 дні (днів) |
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| C3M0060065J | Виробник : Wolfspeed(CREE) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 99A; 136W Case: D2PAK-7 Technology: C3M™; SiC Mounting: SMD Power dissipation: 136W Polarisation: unipolar Gate-source voltage: -8...19V Gate charge: 46nC On-state resistance: 80mΩ Drain current: 26A Pulsed drain current: 99A Drain-source voltage: 650V Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET |
товару немає в наявності |