C3M0065090D

Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 36A; 125W; TO247-3; 30ns
Mounting: THT
Gate-source voltage: -8...19V
Reverse recovery time: 30ns
Gate charge: 30.4nC
On-state resistance: 78mΩ
Power dissipation: 125W
Drain current: 36A
Drain-source voltage: 900V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Case: TO247-3
Polarisation: unipolar

Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 900V 36A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 600 V
Gate Charge (Qg) (Max) @ Vgs: 30.4 nC @ 15 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): +18V, -8V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Active
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 20A, 15V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube

Виробник: WOLFSPEED
Description: WOLFSPEED - C3M0065090D - Siliziumkarbid-MOSFET, Eins, n-Kanal, 36 A, 900 V, 0.065 ohm, TO-247
tariffCode: 85412900
Drain-Source-Spannung Vds: 900V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 36A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.1V
MOSFET-Modul-Konfiguration: Eins
euEccn: NLR
Verlustleistung: 125W
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 15V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.065ohm
SVHC: No SVHC (17-Dec-2015)