| Кількість | Ціна |
|---|---|
| 1+ | 1328.19 грн |
| 10+ | 1246.72 грн |
| 25+ | 1054.14 грн |
| 50+ | 921.07 грн |
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Технічний опис C3M0065100J Wolfspeed
Description: SICFET N-CH 1000V 35A D2PAK-7, Packaging: Tube, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Rds On (Max) @ Id, Vgs: 78mOhm @ 20A, 15V, Power Dissipation (Max): 113.5W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 5mA, Supplier Device Package: D2PAK-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +15V, -4V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 600 V.
Інші пропозиції C3M0065100J за ціною від 984.07 грн до 1388.92 грн
| Фото | Назва | Виробник | Інформація |
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C3M0065100J | Виробник : Wolfspeed, Inc. |
 Description: SICFET N-CH 1000V 35A D2PAK-7Packaging: Tube Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 78mOhm @ 20A, 15V Power Dissipation (Max): 113.5W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 5mA Supplier Device Package: D2PAK-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +15V, -4V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 600 V |
на замовлення 1678 шт: термін постачання 21-31 дні (днів) |
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C3M0065100J | Виробник : Wolfspeed(CREE) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 35A; 113.5W; D2PAK-7; 14ns Case: D2PAK-7 Technology: C3M™; SiC Mounting: SMD Power dissipation: 113.5W Polarisation: unipolar Gate-source voltage: -8...19V Gate charge: 9nC Reverse recovery time: 14ns On-state resistance: 65mΩ Drain current: 35A Drain-source voltage: 1kV Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET |
товару немає в наявності |