C3M0120065L-TR Wolfspeed
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 671.10 грн |
| 10+ | 566.89 грн |
| 25+ | 446.90 грн |
| 100+ | 410.66 грн |
| 250+ | 386.51 грн |
| 500+ | 362.35 грн |
| 1000+ | 326.12 грн |
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Технічний опис C3M0120065L-TR Wolfspeed
Description: SIC, MOSFET, 120M, 650V, TOLL, I, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Tc), Rds On (Max) @ Id, Vgs: 157mOhm @ 6.76A, 15V, Power Dissipation (Max): 86W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 1.86mA, Supplier Device Package: TOLL, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +19V, -8V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 400 V.
Інші пропозиції C3M0120065L-TR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| C3M0120065L-TR | Виробник : Wolfspeed |
 C3M0120065L-TR |
товару немає в наявності |
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C3M0120065L-TR | Виробник : Wolfspeed, Inc. |
Description: SIC, MOSFET, 120M, 650V, TOLL, I Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 157mOhm @ 6.76A, 15V Power Dissipation (Max): 86W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 1.86mA Supplier Device Package: TOLL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 400 V |
товару немає в наявності |
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C3M0120065L-TR | Виробник : Wolfspeed, Inc. |
Description: SIC, MOSFET, 120M, 650V, TOLL, I Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 157mOhm @ 6.76A, 15V Power Dissipation (Max): 86W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 1.86mA Supplier Device Package: TOLL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 400 V |
товару немає в наявності |