C3M0160120J Wolfspeed, Inc.

Description: SICFET N-CH 1200V 17A TO263-7, Packaging: Tube, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Rds On (Max) @ Id, Vgs: 208mOhm @ 8.5A, 15V, Power Dissipation (Max): 90W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 2.33mA, Supplier Device Package: TO-263-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +15V, -4V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 632 pF @ 1000 V.